Ordered La(Sr)-deficient nonstoichiometry in La_0.8Sr_0.2MnO₃ observed by high-resolution transmission electron microscopyCERVA, H.Journal of solid state chemistry (Print). 1995, Vol 120, Num 1, pp 175-181, issn 0022-4596Article

Imaging of La/Sr vacancy defects in La_0.8Sr_0.2MnO₃ by high-resolution transmission electron microscopyCERVA, H.Journal of solid state chemistry (Print). 1995, Vol 114, Num 1, pp 211-218, issn 0022-4596Article

High-resolution electron microscopy of diamond hexagonal silicon in low pressure chemical vapor deposited polycristalline siliconCERVA, H.Journal of materials research. 1991, Vol 6, Num 11, pp 2324-2336, issn 0884-2914Article

Transmission electron microscopy of heteroepitaxial layer structuresCERVA, H.Applied surface science. 1991, Vol 50, Num 1-4, pp 19-27, issn 0169-4332, 9 p.Conference Paper

Comparison of the information content in <110>- and <100>-projected high-resolution transmission electron microscope images for the quantitative analysis of AlAs/GaAs interfacesTHOMA, S; CERVA, H.Ultramicroscopy. 1994, Vol 53, Num 1, pp 37-51, issn 0304-3991Article

New methods for qualitative and quantitative analysis of the GaAs/AlGaAs interface by high-resolution electron microscopyTHOMA, S; CERVA, H.Ultramicroscopy. 1991, Vol 38, Num 3-4, pp 265-289, issn 0304-3991Article

Characterisation of heteroepitaxial compound semiconductor layers and superlattices using transmission electron microscopyCERVA, H; OPPOLZER, H.Progress in crystal growth and characterization. 1990, Vol 20, Num 3, pp 231-261, issn 0146-3535Article

Defects due to metal silicide precipitation in microelectronic device manufacturing : The unlovely face of transition metal silicidesKOLBESEN, B. O; CERVA, H.Physica status solidi. B. Basic research. 2000, Vol 222, Num 1, pp 303-317, issn 0370-1972Article

Contrast investigations of surface acoustic waves by stroboscopic topography. III: Contrast in transmission caseCERVA, H; GRAEFF, W.Physica status solidi. A. Applied research. 1986, Vol 93, Num 2, pp K129-K132, issn 0031-8965Article

Comparison of transmission electron microscope cross sections of amorphous regions in ion implanted silicon with point-defect density calculationsCERVA, H; HOBLER, G.Journal of the Electrochemical Society. 1992, Vol 139, Num 12, pp 3631-3638, issn 0013-4651Article

Contrast investigations of surface acoustic waves by stroboscopic topography. I: Orientation contrastCERVA, H; GRAEFF, W.Physica status solidi. A. Applied research. 1984, Vol 82, Num 1, pp 35-45, issn 0031-8965Article

High-resolution electron microscopy of heterostructures and interfaces : High-resolution electron microscopy of semiconductor interfacesCERVA, H; OPPOLZER, H.Applied physics. A, Solids and surfaces. 1993, Vol 57, Num 5, pp 377-383, issn 0721-7250Article

The influence of non-linear interference processes on the HREM contrast of AlGaAs in (100) projectionTHOMA, S; CERVA, H.Ultramicroscopy. 1991, Vol 35, Num 2, pp 77-97, issn 0304-3991Article

Defect formation in silicon at a mask edge during crystallization of an amorphous implantation layerCERVA, H; KÜSTERS, K.-H.Journal of applied physics. 1989, Vol 66, Num 10, pp 4723-4728, issn 0021-8979Article

Contrast investigations of surface acoustic waves by stroboscopic topographyCERVA, H; GRAEFF, W.Physica status solidi. A. Applied research. 1985, Vol 87, Num 2, pp 507-516, issn 0031-8965Article

Implantation defects below mask edges in silicon : structure and effect on devicesCERVA, H; BERGHOLZ, W.Journal of the Electrochemical Society. 1993, Vol 140, Num 3, pp 780-786, issn 0013-4651Article

Microstructure and crystal structure of bismuth oxide phases in zinc oxide varistor ceramicsCERVA, H; RUSSWURM, W.Journal of the American Ceramic Society. 1988, Vol 71, Num 7, pp 522-530, issn 0002-7820Article

Impact of copper contamination on the quality of silicon oxidesWENDT, H; CERVA, H; LEHMANN, V et al.Journal of applied physics. 1989, Vol 65, Num 6, pp 2402-2405, issn 0021-8979, 4 p.Article

High-resolution transmission electron microscopy of heterostructuresCERVA, H.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 1045-1052, issn 0038-1101Conference Paper

Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopyREITHMAIER, J.-P; CERVA, H; LÖSCH, R et al.Applied physics letters. 1989, Vol 54, Num 1, pp 48-50, issn 0003-6951Article

Damage to the silicon lattice by reactive ion etchingSTRUNK, H. P; CERVA, H; MOHR, E. G et al.Journal of the Electrochemical Society. 1988, Vol 135, Num 11, pp 2876-2880, issn 0013-4651Article

Lattice defects in single-crystal lithium niobate. II: Electric fields of dislocations and small-angle grain boundariesCERVA, H; PONGRATZ, P; SKALICKY, P et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1986, Vol 54, Num 2, pp 199-212, issn 0141-8610Article

Specific preparation procedures for failure analysis of (sub)micron areas in silicon devicesCERVA, H; HUBER, V; ECKERS, W et al.Ultramicroscopy. 1993, Vol 52, Num 1, pp 127-140, issn 0304-3991Article

Lattice defects in single-crystal lithium niobate. I: Transmission electron microscopyCERVA, H; PONGRATZ, P; SKALICKY, P et al.Philosophical magazine. A. Physics of condensed matter. Defects and mechanical properties. 1986, Vol 54, Num 2, pp 185-197, issn 0141-8610Article

Transmission electron microscopy of short-period Si/Ge strained-layer superlattices on Ge substratesWEGSCHEIDER, W; EBERL, K; CERVA, H et al.Applied physics letters. 1989, Vol 55, Num 5, pp 448-450, issn 0003-6951, 3 p.Article